Zhang Lab @ UTA

Our research focuses on: 1) developing advanced functional thin films and microelectronic devices; 2) understanding their structure-property relationships using advanced electron microscopy and X-ray techniques.

Our recent work of utilizing in-situ TEM biasing for studying thin film memristive device was just published on Advanced Functional Materials (IF = 19) !  Clike here

The study presents a new perspective of the interface-dominated RS process for fabricating novel CMOS compatible memristive devices for energy-efficient microelectronic device applications.

Our journal cover design has been selected for the Back Cover of Advanced Functional Materials! The drawing shows a large number of oxygen vacancies (V_O) migrate under the electric field through grain boundaries of the TiOx phase.  Click here

Our recent work of growing Multialloy Au‐Co‐Pd Nanopillars‐in‐Oxide Hybrid Metamaterials was published on Small Science (IF = 8.3) !  Click here

This work demonstrates the wide feasibility of integrating diverse materials systems into VAN structure toward multifunctional property coupling for electronic, photonic, and energy devices applications.

Our work of high-throughput combinatorial PLD method of growing lead-free relaxor ferroelectric thin film was published on InfoMat (IF = 22.3) !  Click here

This high-throughput synthesis approach can be applied to many other material systems to expedite new materials discovery and properties optimization, allowing for the exploration of a large area of phase space within a single growth.