Zhang Lab @ UTA

Developing advanced semiconductor materials and microelectronic devices for next-generation energy-efficient memory and computing applications.

Our recent work of utilizing in-situ TEM biasing for studying thin film memristive device was just published on Advanced Functional Materials (IF = 19)!  Clike here

The study presents a new perspective of the interface-dominated RS process for fabricating novel CMOS compatible memristive devices for energy-efficient microelectronic device applications.

In-situ I-V characteristic and Ti L₂/L₃ EELS maps confirm the oxygen vacancies migration inside the device under +/- DC biases.  Click here

Our recent work of growing Multialloy Au‐Co‐Pd Nanopillars‐in‐Oxide Hybrid Metamaterials was published on Small Science (IF = 8.3)!  Click here

This work demonstrates the wide feasibility of integrating diverse materials systems into VAN structure toward multifunctional property coupling for electronic, photonic, and energy devices applications.

Our work of high-throughput combinatorial PLD method of growing lead-free relaxor ferroelectric thin film was published on InfoMat (IF = 22.3)!  Click here

This high-throughput synthesis approach can be applied to many other material systems to expedite new materials discovery and properties optimization, allowing for the exploration of a large area of phase space within a single growth.